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Avalanche Effect Sometimes, a diode conducts when it is reverse-biased The greater the reverse-bias voltage, the more like an electrical insulator a P-N junction gets up to a point But if the reverse bias rises past a specific critical value, the voltage overcomes the ability of the junction to prevent the flow of current, and the junction conducts as if it were forward-biased This phenomenon is called the avalanche effect because conduction occurs in a sudden and massive way, something like a snow avalanche on a mountainside The avalanche effect does not damage a P-N junction (unless the voltage is extreme) It s a temporary thing When the voltage drops back below the critical value, the junction behaves normally again Some components are designed to take advantage of the avalanche effect In other cases, the avalanche effect limits the performance of a circuit In a device designed for voltage regulation, called a Zener diode, you ll hear about the avalanche voltage or Zener voltage specification This can range from a couple of volts to well over 100 V Zener diodes are often used in voltage-regulating circuits For rectifier diodes in power supplies, you ll hear or read about the peak inverse voltage (PIV) or peak reverse voltage (PRV) specification It s important that rectifier diodes have PIV ratings great enough so that the avalanche effect will not occur (or even come close to happening) during any part of the ac cycle

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95 GPS AIDING Therefore, the state and error state remain x = [n, e, , RL , RR ] x = [ n, e, , RL , RR ]

and F(t), , and remain as de ned in eqn (922) Assuming that m satellites are available and that measurements from the rst satellite are subtracted from all the others, the di erenced pseudorange and carrier phase measurements can be predicted from the navigation state as i i = = x x R( , pi ) + i R( , p1 ) + 1 (934)

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Refer to the text in this chapter if necessary A good score is at least 18 correct Answers are in the back of the book 1 The term semiconductor arises from (a) resistor-like properties of metal oxides (b) variable conductive properties of some materials (c) the fact that electrons conduct better than holes (d) insulating properties of silicon and GaAs 2 Which of the following is not an advantage of semiconductor devices over vacuum tubes (a) Smaller size (b) Lower working voltage

x x R( , pi ) + i R( , p1 ) + 1 + N i N 1 (935)

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(c) Lighter weight (d) Ability to withstand high voltage spikes 3 Of the following substances, which is the most commonly used semiconductor (a) Germanium (b) Galena (c) Silicon (d) Copper 4 GaAs is (a) a compound (b) an element (c) a mixture (d) a gas 5 A disadvantage of MOS devices is the fact that (a) the charge carriers move fast (b) the material does not react to ionizing radiation (c) they can be damaged by electrostatic discharges (d) they must always be used at high frequencies 6 Selenium works especially well in (a) photocells (b) high-frequency detectors (c) RF power amplifiers (d) voltage regulators 7 Of the following, which material allows the lowest forward voltage drop in a diode (a) Selenium (b) Silicon (c) Copper (d) Germanium 8 A CMOS integrated circuit (a) can only work at low frequencies (b) requires very little power to function (c) requires considerable power to function (d) can only work at high frequencies 9 The purpose of doping is to (a) make the charge carriers move faster (b) cause holes to flow

for i = 2, , m The same assumptions and comments apply as were discussed following eqns (926-927) In this approach, the measurement residuals for the i-th satellite would be computed as i (t) i (t) = = i (t) 1 (t) i (t) i (t) 1 (t) i (t) (936) (937)

For i = 2, , m, the error models for the measurement residuals are i (t) (t)

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